EPC9049: 4A, 0 ~ 60V, Half Bridge(EPC9049)

This development board is in a half bridge topology with onboard gate drives, featuring theEPC2035/36 eGaN® field effect transistors (FETs). The purpose of these development boards isto simplify the evaluation process of these eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

The development board is 2” x 1.5” and contains two eGaN FETs in a half bridge configuration using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A complete block diagram of the circuit is given in Figure 1.

For more information on the EPC2035/36 eGaN FET, please refer to the datasheets which should be read in conjunction with this quickstart guide.

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EPC9049: 4A, 0 ~ 60V, Half Bridge EPC9049

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Производитель: Efficient Power Conversion (EPC) Corporation
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EPC2035
EPC2035
Efficient Power Conversion (EPC) Corporation
Арт.: 2200735 ИНФО PDF RD DT
Доступно: 2362 шт. от 1 шт. от 154,50
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TRANS GAN 60V 1A BUMPED DIE
EPC2035 от 1 шт. от 154,50
2362 шт.
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