EPC9001C: 15A @ 0 ~ 40V, Half H-Bridge(EPC9001C)

The EPC9001C development board is a 40 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives, featuring the EPC2015C enhancement mode (eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2015C eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9001C development board is 2” x 1.5” and contains two EPC2015Cs eGaN FET in a half bridge configuration using Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

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EPC9001C: 15A @ 0 ~ 40V, Half H-Bridge EPC9001C

Используемые компоненты

Производитель: Efficient Power Conversion (EPC) Corporation
Наименование
Производитель
Описание Корпус/
Изображение
Цена, руб. Наличие
EPC2015C
EPC2015C
Efficient Power Conversion (EPC) Corporation
Арт.: 2178179 ИНФО PDF AN RD
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предложений
eGaN (Нитрид Галлия) FET транзистор
EPC2015C
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предложений

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