IRF640 (Samsung Electronics )

Наименование IRF640
Производитель Samsung Electronics (SAM)
Артикул 8133
OBS Снято с производства

LS: 13 3 6 1 Транзистор полевой

IRF640NPBF (INFIN)
от 27,80 Склад (1-2 дн)

MOSFET, N, 200V, 18A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:18A; Resistance, Rds On:0.15ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:72A; Pins, No.…

IRF640PBF (VISH/IR)
от 42,80 Склад (1-2 дн)

MOSFET, N, 200V, 18A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:18A; Resistance, Rds On:0.18ohm; Voltage, Vgs Rds on Measurement:10V;…

PHP20NQ20T.127 (NEX-NXP)
от 23,30 Склад (1-2 дн)

N-channel TrenchMOS transistor

STP20NF20 (ST)
от 36,40 Склад (1-2 дн)

MOSFET силовой транзистор - [TO-220-3]; Тип: N; Iс(25°C): 18 А; Rси(вкл): 0.125 Ом; @Uзатв(ном): 10 В; Qзатв: 28 нКл; Pрасс: 90 Вт

IRF640 (VISH/IR)
от 44,50 Склад (1-2 дн)

MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:18A; Resistance, Rds On:0.18ohm; Case Style:TO-220 (SOT-78B); Capacitance, Ciss Typ:1200pF; Case Style, Alternate:SOT-78B; Current, Idm Pulse:72A; Energy, Avalanche Single Pulse Eas:280mJ; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Pins, No.…

IRFB4020PBF (INFIN)
Доступно 46585 шт. (под заказ)

MOSFET, N, 200V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:18A; Resistance, Rds On:0.1ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4.9V; Case Style:TO-220AB; Termination Type:Through Hole; Base Number:4020; Charge, Gate N-channel:18nC; Current, Idm Pulse:52A; Pins, No.…