SKM200GB123D (Semikron Inc. )

Наименование SKM200GB123D
Производитель Semikron Inc. (SMK)
Артикул 68849
OBS Снято с производства
Корпус
Напряжение пробоя коллектор-эмиттер Uces
Ток
Количество ключей
Напряжение насыщения коллектор-эмиттер Vce (on)

IGBT MODULE, HALF BRIDGE

Transistor TypeIGBT Module
Transistor PolarityN Channel
Voltage, Vces1200V
Current, Ic Continuous a Max200A
Voltage, Vce Sat Max3V
Case StyleSEMITRANS 3
Termination TypeScrew
Centres, Fixing93mm
Current, Ic Continuous b Max180A
Current, Ic av200A
Current, Icm Pulsed400A
Depth, External51.4mm
Diameter, Fixing Hole6.4mm
Length / Height, External30.5mm
Power, Pd1380W
Power, Ptot1380W
Temperature, Current25°C
Time, Rise100ns
Transistors, No. of2
Voltage, Vceo1200V
Width, External105.4mm

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IGBT MODULE, DUAL, 1200V; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current, Ic Continuous a Max:260A; Voltage, Vce Sat Max:2.15V; Case Style:SEMITRANS 3; Termination Type:Screw; Centres, Fixing:93mm; Current, Ic Continuous b Max:190A; Current, Ic av:260A; Current, Icm Pulsed:200A; Depth, External:61.4mm; Diameter, Fixing Hole:5.4mm; Marking, SMD:SEMITRANS 3; Power, Pd:220W; Temperature, Current:25°C; Time, Rise:40ns; Transistors, No.…

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IGBT Modules 1200V 200A Dual