IRF630NS (Infineon Technologies Ag (Siemens Semiconductors) )

IRF630NS, Infineon Technologies Ag (Siemens Semiconductors) IRF630NS, Infineon Technologies Ag (Siemens Semiconductors) IRF630NS, Infineon Technologies Ag (Siemens Semiconductors)
Наименование IRF630NS
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 49417
Vgs для измерения Rds(on)
Номинальное напряжение Vgs
Rd(on)
Рассеиваемая мощность
Ток стока номинальный (Id) @ 25°C, без учета ограничений корпуса
Конфигурация и полярность
Макс. напряжение Vdss
Корпус

MOSFET, N TO-263

Transistor TypeMOSFET
Transistor PolarityN
Current, Id Cont9.3A
Resistance, Rds On0.3ohm
Case StyleTO-263
Termination TypeSMD
Capacitance, Ciss Typ575pF
Charge, Gate N-channel35nC
Current, Iar9.3A
Current, Idm Pulse37A
Current, Idss Max25чA
Depth, External15.49mm
Energy, Avalanche Repetitive Ear8.2mJ
Energy, Avalanche Single Pulse Eas94mJ
Length / Height, External4.69mm
Marking, SMDIRF630NS
Power Dissipation82W
Power Dissipation, on 1 Sq. PCB3.8W
Power, Pd82W
Resistance, Rds on @ Vgs = 10V0.3ohm
Temperature, Current25°C
Temperature, Full Power Rating25°C
Temperature, Tj Max175°C
Temperature, Tj Min-55°C
Thermal Resistance, Junction to Case A1.83°C/W
Time, Fall15ns
Time, Rise14ns
Time, trr Typ117ns
Transistors, No. of1
Voltage, Vds Max200V
Voltage, Vgs Rds N Channel10V
Voltage, Vgs th Max4V
Voltage, Vgs th Min2V
Width, External10.16mm

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