IRG4BC30W (Infineon Technologies Ag (Siemens Semiconductors) )

IRG4BC30W, Infineon Technologies Ag (Siemens Semiconductors) IRG4BC30W, Infineon Technologies Ag (Siemens Semiconductors) IRG4BC30W, Infineon Technologies Ag (Siemens Semiconductors)
Наименование IRG4BC30W
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 46381
Напряжение коллектор-эмиттер макс.
Корпус
Ток коллектора макс. при 25°C
Напряжение насыщения К-Э

IGBT, TO-220

Transistor TypeIGBT
Transistor PolarityN
Current, Ic Continuous a Max23A
Voltage, Vce Sat Max2.7V
Power Dissipation100W
Case StyleTO-220
Current, Icm Pulsed92A
Pins, No. of3
Power, Pd100W
Temperature, Current25°C
Temperature, Full Power Rating25°C
Time, Fall150ns
Time, Fall Max150ns
Time, Rise17ns
Transistors, No. of1
Voltage, Vceo600V

IRG4BC30WPBF (INFIN)
от 93,00 Склад (1-2 дн)

IGBT, 600V, 23A, TO-220; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current, Ic Continuous a Max:23A; Voltage, Vce Sat Max:2.7V; Power Dissipation:100W; Case Style:TO-220; Termination Type:Through Hole; Current, Icm Pulsed:92A; Pins, No.…