IRG4BC20KD (Infineon Technologies Ag (Siemens Semiconductors) )

Наименование IRG4BC20KD
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 44564
Напряжение коллектор-эмиттер макс.
Корпус
Ток коллектора макс. при 25°C
Напряжение насыщения К-Э

IGBT TRANSISTOR POWER DISSIPATION

60W
P
Transistor TypeIGBT
Transistor PolarityN
Current, Ic Continuous a Max16A
Voltage, Vce Sat Max2.27V
Power Dissipation60W
Case StyleTO-220
Current, Icm Pulsed32A
Pins, No. of3
Power, Pd60W
Temperature, Current25°C
Temperature, Full Power Rating25°C
Time, Fall Typ160ns
Time, Rise37ns
Time, Short Circuit Withstand Min10чs
Transistors, No. of1
Voltage, Vceo600V

Производитель: INFIN
IRG4BC20KD.pdf
IRG4BC20KDPBF (INFIN)
от 53,50 Склад (1-2 дн)

IGBT, N, 600V, 16A, TO-220AB; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current, Ic Continuous a Max:16A; Voltage, Vce Sat Max:2.8V; Power Dissipation:60W; Case Style:TO-220AB; Termination Type:Through Hole