IRFU5305 (Infineon Technologies Ag (Siemens Semiconductors) )

Наименование IRFU5305
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 37131
Рассеиваемая мощность
Напряжение для измерения Rds(on)
Номинальное напряжение Vgs
Ток стока номинальный (Id) @ 25°C, без учета ограничений корпуса
Конфигурация и полярность
Макс. напряжение Vdss


Transistor TypeMOSFET
Transistor PolarityP
Current, Id Cont22A
Resistance, Rds On0.065ohm
Case StyleTO-251 (I-Pak)
Capacitance, Ciss Typ1200pF
Current, Iar16A
Current, Idm Pulse110A
Energy, Avalanche Repetitive Ear6.9mJ
Energy, Avalanche Single Pulse Eas280mJ
Length, Lead9.65mm
Pitch, Lead2.28mm
Power Dissipation110W
Power, Pd69W
Resistance, Rds on @ Vgs = 10V0.065ohm
Temperature, Current25°C
Temperature, Full Power Rating25°C
Temperature, Tj Max175°C
Temperature, Tj Min-55°C
Thermal Resistance, Junction to Case A1.8°C/W
Time, Fall63ns
Time, Rise66ns
Transistors, No. of1
Voltage, Vds Max55V
Voltage, Vgs th Max-4V
Voltage, Vgs th Min-2V

от 36,00 Склад (1-2 дн)

MOSFET, P, -55V, -28A, I-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-55V; Current, Id Cont:22A; Resistance, Rds On:0.065ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-4V; Case Style:I-PAK; Termination Type:Through Hole; Capacitance, Ciss Typ:1200pF; Case Style, Alternate:I-PAK; Current, Iar:16A; Current, Idm Pulse:110A; Energy, Avalanche Repetitive Ear:6.9mJ; Energy, Avalanche Single Pulse Eas:280mJ; Length, Lead:9.65mm; Pitch, Lead:2.28mm; Power Dissipation:110W; Power, Pd:69W; Resistance, Rds on @ Vgs 10V:0.065ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:1.8°C/W; Time, Fall:63ns; Time, Rise:66ns; Time, t Off:39ns; Time, t On:14ns; Transistors, No.…