IRF7601 (Infineon Technologies Ag (Siemens Semiconductors) )

Наименование IRF7601
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 37098
Макс. напряжение Vdss
Корпус
Напряжение для измерения Rds(on)
Номинальное напряжение Vgs
Rd(on)
Конфигурация и полярность

MOSFET, N MICRO-8

Transistor TypeMOSFET
Transistor PolarityN
Current, Id Cont5.7A
Resistance, Rds On0.035ohm
Voltage, Vgs Rds on Measurement4.5V
Case StyleMicro8
Termination TypeSMD
Capacitance, Ciss Typ650pF
Charge, Qrr Typ @ Tj = 25°C69nC
Current, Idm Pulse30A
Depth, External5.03mm
Gfs, Min6.1A/V
Length / Height, External1.11mm
Marking, SMD7601
Pins, No. of8
Pitch, Lead0.65mm
Pitch, Row4.24mm
Power Dissipation1.8W
Power, Pd1.8W
Resistance, Rds on Max0.035ohm
Temperature, Current25°C
Temperature, Full Power Rating25°C
Temperature, Tj Max150°C
Temperature, Tj Min-55°C
Time, trr Typ51ns
Transistors, No. of1
Voltage, Vds20V
Voltage, Vds Max20V
Voltage, Vgs th Min0.7V
Width, External3.05mm
dv/dt5.0V/ns

IRF7601TRPBF (INFIN)
Доступно 44569 шт. (под заказ)

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:5.7A; Package/Case:8-uSOIC; Power Dissipation, Pd:1.8W; Drain Source On Resistance @ 2.7V:50mohm; Drain Source On Resistance @ 4.5V:35mohm

IRF7601PBF (INFIN)
Доступно 1180 шт. (под заказ)

20V-30V N-Channel Power MOSFET, Преимущества RoHS Compliant Low RDS(on) Industry-leading quality Dynamic…