IRFU3910 (Infineon Technologies Ag (Siemens Semiconductors) )

IRFU3910, Infineon Technologies Ag (Siemens Semiconductors) IRFU3910, Infineon Technologies Ag (Siemens Semiconductors) IRFU3910, Infineon Technologies Ag (Siemens Semiconductors)
Наименование IRFU3910
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 36165
Рассеиваемая мощность
Корпус
Макс. напряжение Vdss
Конфигурация и полярность
Ток стока номинальный (Id) @ 25°C, без учета ограничений корпуса
Rd(on)
Vgs для измерения Rds(on)

MOSFET, N I-PAK

Transistor TypeMOSFET
Transistor PolarityN
Current, Id Cont16A
Resistance, Rds On0.115ohm
Case StyleTO-251 (I-Pak)
Current, Idm Pulse60A
Length, Lead9.65mm
Marking, SMDIRFU3910
Pitch, Lead2.28mm
Power Dissipation79W
Power, Pd79W
Temperature, Current25°C
Temperature, Full Power Rating25°C
Time, t Off25ns
Time, t On27ns
Transistors, No. of1
Voltage, Vds Max100V

IRFU3910PBF (INFIN)
от 29,50 Склад (1-2 дн)

MOSFET, N, 100V, 15A, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:16A; Resistance, Rds On:0.115ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:I-PAK; Termination Type:Through Hole; Case Style, Alternate:I-PAK; Current, Idm Pulse:60A; Length, Lead:9.65mm; Marking, SMD:IRFU3910; Pitch, Lead:2.28mm; Power Dissipation:79W; Power, Pd:79W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:2.4°C/W; Time, t Off:25ns; Time, t On:27ns; Transistors, No.…