BSM25GD120DN2BOSA1 (Infineon Technologies Ag (Siemens Semiconductors) )

Наименование BSM25GD120DN2BOSA1
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 321979
Корпус

IGBT MODULE, 1200V, ECONOPACK3

Transistor TypeIGBT Module
Voltage, Vces1200V
Current, Ic Continuous a Max25A
Voltage, Vce Sat Max3V
Power Dissipation200W
Case StyleEconopack 2
Termination TypeSolder
Current, Icm Pulsed50A
Power, Pd200W
Temperature, Current80°C
Temperature, Full Power Rating25°C
Transistors, No. of6
Voltage, Vce Sat Typ2.5V
Voltage, Vceo1200V

FP25R12KT3BOSA1 (INFIN)
от 4390,00 Склад (1-2 дн)

IGBT Modules up to 1200V, EconoPIM™ 2 1200V three phase PIM IGBT module with fast Trench/Fieldstop IGBT3 and NTC Возможности …

В НАЛИЧИИ 31шт.
5830,00 от 2 шт. 5350,00
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