IRF1405 (Infineon Technologies Ag (Siemens Semiconductors) )

Наименование IRF1405
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 26736
Ток стока номинальный (Id) @ 25°C, без учета ограничений корпуса
Конфигурация и полярность
Макс. напряжение Vdss
Корпус
Рассеиваемая мощность
Напряжение для измерения Rds(on)
Номинальное напряжение Vgs
Rd(on)

MOSFET, N TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:169A; Resistance, Rds On:0.0053ohm; Case Style:TO-220AB; Current, Idm Pulse:680A; Pin Format:1 g; 2 d/tab; 3 s; Pins, No. of:3; Pitch, Lead:2.54mm; Power Dissipation:330W; Power, Pd:330W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:55V

IRF1405PBF (INFIN)
от 74,50 Склад (1-2 дн)

MOSFET, N, 55V, 133A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:169A; Resistance, Rds On:0.0053ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:680A; Pin Format:1 g; 2 d/tab; 3 s; Pins, No.…

IRFB3206PBF (INFIN)
от 80,00 Склад (1-2 дн)

MOSFET, N, 60V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:210A; Resistance, Rds On:0.003ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Base Number:3206; Charge, Gate N-channel:120nC; Current, Idm Pulse:840A; Pins, No.…