IRFB3507PBF (Infineon Technologies Ag (Siemens Semiconductors) )

IRFB3507PBF, Infineon Technologies Ag (Siemens Semiconductors)
Наименование IRFB3507PBF
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 258028
Vgs для измерения Rds(on)
Rd(on)
Ток стока номинальный (Id) @ 25°C, без учета ограничений корпуса
Конфигурация и полярность
Макс. напряжение Vdss
Корпус
Рассеиваемая мощность

MOSFET, N, 75V, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:75V; Current, Id Cont:97A; Resistance, Rds On:7mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:390A; Pin Format:1 g; 2 d/tab; 3 s; Pins, No. of:3; Pitch, Lead:2.54mm; Power Dissipation:190W; Power, Pd:190W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:75V

IPP100N08N3GXKSA1 (INFIN)
от 60,00 Склад (1-2 дн)

80V-100V N-Channel Power MOSFET, OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supp…