IRLL014N (Infineon Technologies Ag (Siemens Semiconductors) )

Наименование IRLL014N
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 25770
Корпус
Напряжение для измерения Rds(on)
Номинальное напряжение Vgs
Rd(on)
Ток стока номинальный (Id) @ 25°C, без учета ограничений корпуса
Конфигурация и полярность
Макс. напряжение Vdss

MOSFET, N LOGIC SOT-223

Transistor TypeMOSFET
Transistor PolarityN
Current, Id Cont2A
Resistance, Rds On0.14ohm
Case StyleSOT-223
Termination TypeSMD
Current, Idm Pulse16A
Depth, External7.3mm
Length / Height, External1.7mm
Marking, SMDLL014N
Power Dissipation2.1W
Power, Pd2.1W
Temperature, Current25°C
Temperature, Full Power Rating25°C
Transistors, No. of1
Voltage, Vds Max55V
Voltage, Vgs th Max2V
Width, External6.7mm
Width, Tape12mm

IRLL014NPBF (INFIN)
от 21,20 Склад (1-2 дн)

MOSFET, N, 55V, 2A, SOT-223; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:2A; Resistance, Rds On:0.14ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:SOT-223; Termination Type:SMD; Current, Idm Pulse:16A; Depth, External:7.3mm; Length / Height, External:1.7mm; Marking, SMD:LL014N; Power Dissipation:2.1W; Power, Pd:2.1W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:60°C/W; Transistors, No.…

IRLL014NTRPBF (INFIN)
от 15,70 Склад (1-2 дн)

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:2A; Package/Case:SOT-223; Power Dissipation, Pd:2.1W; Drain Source On Resistance @ 10V:140mohm; Drain Source On Resistance @ 4.5V:280mohm