IRF3415S (Infineon Technologies Ag (Siemens Semiconductors) )

IRF3415S, Infineon Technologies Ag (Siemens Semiconductors) IRF3415S, Infineon Technologies Ag (Siemens Semiconductors) IRF3415S, Infineon Technologies Ag (Siemens Semiconductors)
Наименование IRF3415S
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 25376
Макс. напряжение Vdss
Корпус
Рассеиваемая мощность
Vgs для измерения Rds(on)
Rd(on)
Ток стока номинальный (Id) @ 25°C, без учета ограничений корпуса
Конфигурация и полярность

MOSFET, N D2-PAK

Transistor TypeMOSFET
Transistor PolarityN
Current, Id Cont43A
Resistance, Rds On0.042ohm
Case StyleTO-263
Termination TypeSMD
Current, Idm Pulse150A
Marking, SMDIRF3415S
Power Dissipation200W
Power Dissipation, on 1 Sq. PCB3.8W
Power, Pd200W
Temperature, Current25°C
Temperature, Full Power Rating25°C
Voltage, Vds150V
Voltage, Vds Max150V
Voltage, Vgs th Max4V

Производитель: INFIN
IRF3415S.pdf
IRF3415STRLPBF (INFIN)
Доступно 24966 шт. (под заказ)

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:43A; On Resistance, Rds(on):42mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D2-Pak; Power Dissipation, Pd:200W

IRF3415SPBF (INFIN)
от 72,50 Склад (1-2 дн)

MOSFET, N, 150V, 43A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:43A; Resistance, Rds On:0.042ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Case Style, Alternate:D2-PAK; Current, Idm Pulse:150A; Marking, SMD:IRF3415S; Power Dissipation:200W; Power Dissipation, on 1 Sq.…