IRFL4310 (Infineon Technologies Ag (Siemens Semiconductors) )

Наименование IRFL4310
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 24208
Напряжение для измерения Rds(on)
Номинальное напряжение Vgs
Rd(on)
Конфигурация и полярность
Макс. напряжение Vdss
Корпус

MOSFET, N SOT-223

Transistor TypeMOSFET
Transistor PolarityN
Current, Id Cont1.6A
Resistance, Rds On0.2ohm
Case StyleSOT-223
Termination TypeSMD
Current, Idm Pulse13A
Depth, External7.3mm
Length / Height, External1.7mm
Marking, SMDFL4310
Power Dissipation2.1W
Power, Pd2.1W
Temperature, Current25°C
Temperature, Full Power Rating25°C
Transistors, No. of1
Voltage, Vds Max100V
Voltage, Vgs th Max4V
Width, External6.7mm
Width, Tape12mm

IRFL4310TRPBF (INFIN)
Доступно 152344 шт. (под заказ)

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:1.6A; On Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:223-SOT; Power Dissipation, Pd:2.1W

IRFL4310PBF (INFIN)
от 23,50 Склад (1-2 дн)

MOSFET, N, 100V, 1.6A, SOT-223; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:1.6A; Resistance, Rds On:0.2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:SOT-223; Termination Type:SMD; Current, Idm Pulse:13A; Depth, External:7.3mm; Length / Height, External:1.7mm; Marking, SMD:FL4310; Power Dissipation:2.1W; Power, Pd:2.1W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:60°C/W; Transistors, No.…