EVAL2EDL23I06PJTOBO1 (Infineon Technologies Ag (Siemens Semiconductors) )

EVAL2EDL23I06PJTOBO1, Infineon Technologies Ag (Siemens Semiconductors)
Наименование EVAL2EDL23I06PJTOBO1
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 2016432
RND Рекомендуется для новых разработок
Чип/Ядро
Функция

Описание

Evaluation Board for 2EDL23I06PJ - Optimized 600V half bridge gate driver IC with LS-SOI technology to control IGBTs
Icon_EICEDRIVER_compact

Возможности

  • Overcurrent comparator
  • Enable function, Fault indicator
  • Individual control circuits for both outputs
  • Filtered detection of under voltage supply
  • All inputs clamped by diodes
  • Off line gate clamping function
  • Asymmetric undervoltage lockout thresholds for high side and low side
  • Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology
  • Ultra fast bootstrap diode
Демоплата  Evaluation Board for 2EDL23I06PJ - Optimized 600V half bridge gate driver IC with LS-SOI technology to control THT Highspeed3-IGBT IKP20N60H3 in TO220 package.