EVAL2EDL05I06PFTOBO1 (Infineon Technologies Ag (Siemens Semiconductors) )

EVAL2EDL05I06PFTOBO1, Infineon Technologies Ag (Siemens Semiconductors)
Наименование EVAL2EDL05I06PFTOBO1
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 2016387
Функция
Чип/Ядро

Описание

Evaluation Board for 2EDL05I06PF - Optimized 600V half bridge gate driver IC with LS-SOI technology to control power devices like MOS-transistors or IGBTs
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Возможности

  • Individual control circuits for both outputs
  • Filtered detection of under voltage supply
  • All inputs clamped by diodes
  • Off line gate clamping function
  • Asymmetric undervoltage lockout thresholds for high side and low side
  • Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology
  • Ultra fast bootstrap diode
Демоплата  Evaluation Board for 2EDL05I06PF - Optimized 600V half bridge gate driver IC with LS-SOI technology to control power devices like MOS-transistors or IGBTs.