SKW25N120 (Infineon Technologies Ag (Siemens Semiconductors) )

Наименование SKW25N120
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 186466
Корпус

IGBT, FAST TUBE 30

Transistor TypeIGBT
Transistor PolarityN
Voltage, Vces1200V
Current, Ic Continuous a Max46A
Voltage, Vce Sat Max3.6V
Power Dissipation313W
Case StyleTO-247AC
Termination TypeThrough Hole
Current, Ic @ Vce Sat25A
Current, Icm Pulsed84A
Pins, No. of3
Power, Pd313W
Power, Ptot313W
Temperature, Current25°C
Temperature, Full Power Rating25°C
Temperature, Tj Max150°C
Temperature, Tj Min-55°C
Time, Fall39ns
Time, Rise40ns
Voltage, Vceo1200V

SKW25N120FKSA1 (INFIN)
от 532,00 Склад (1-2 дн)

Discrete IGBT with Anti-Parallel Diode, Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies.

STGW30NC120HD (ST)
от 207,00 Склад (1-2 дн)

IGBT транзистор - [TO-247-3]; Примечание: IGBT, N 1200V 30A TO-247; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:2.75V;…