IRG4PH30K (Infineon Technologies Ag (Siemens Semiconductors) )

IRG4PH30K, Infineon Technologies Ag (Siemens Semiconductors) IRG4PH30K, Infineon Technologies Ag (Siemens Semiconductors)
Наименование IRG4PH30K
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 17174
Напряжение насыщения К-Э
Напряжение коллектор-эмиттер макс.
Корпус
Ток коллектора макс. при 25°C

IGBT, TO-247

Transistor TypeIGBT
Transistor PolarityN
Current, Ic Continuous a Max20A
Voltage, Vce Sat Max3.1V
Power Dissipation100W
Case StyleTO-247
Current, Icm Pulsed40A
Pins, No. of3
Power, Pd100W
Temperature, Current25°C
Temperature, Full Power Rating25°C
Time, Fall Max170ns
Time, Rise23ns
Time, Short Circuit Withstand Min10чs
Transistors, No. of1
Voltage, Vceo1200V

Производитель: INFIN
IRG4PH30K.pdf
IRG4PH30KPBF (INFIN)
от 142,00 Склад (1-2 дн)

IGBT, TO-247; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current, Ic Continuous a Max:20A; Voltage, Vce Sat Max:3.1V; Power Dissipation:100W; Case Style:TO-247; Termination Type:Through Hole; Current, Icm Pulsed:40A; Pins, No.…