IRG4PF50W (Infineon Technologies Ag (Siemens Semiconductors) )

Наименование IRG4PF50W
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 16676
Напряжение коллектор-эмиттер макс.
Корпус
Ток коллектора макс. при 25°C
Напряжение насыщения К-Э

IGBT, TO-247

Transistor TypeIGBT
Transistor PolarityN
Current, Ic Continuous a Max51A
Voltage, Vce Sat Max2.7V
Power Dissipation200W
Case StyleTO-247
Current, Icm Pulsed204A
Pins, No. of3
Power, Pd200W
Temperature, Current25°C
Temperature, Full Power Rating25°C
Time, Fall220ns
Time, Fall Max220ns
Time, Rise26ns
Transistors, No. of1
Voltage, Vceo900V

IRG4PF50WPBF (INFIN)
от 330,00 Склад (1-2 дн)

IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:900V; Current, Ic Continuous a Max:51A; Voltage, Vce Sat Max:2.7V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Current, Icm Pulsed:204A; Device Marking:IRG4PF50WPBF; Pins, No.…