IRLI2910 (Infineon Technologies Ag (Siemens Semiconductors) )

IRLI2910, Infineon Technologies Ag (Siemens Semiconductors)
Наименование IRLI2910
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 151062
Конфигурация и полярность
Vgs для измерения Rds(on)
Номинальное напряжение Vgs
Rd(on)
Макс. напряжение Vdss
Корпус
Рассеиваемая мощность
Ток стока номинальный (Id) @ 25°C, без учета ограничений корпуса

MOSFET, N LOGIC FULLPAK

Transistor TypeMOSFET
Transistor PolarityN
Current, Id Cont31A
Resistance, Rds On0.026ohm
Voltage, Vgs Rds on Measurement10V
Case StyleTO-220 Fullpak
Current, Iar29A
Current, Idm Pulse190A
Energy, Avalanche Repetitive Ear6.3mJ
Energy, Avalanche Single Pulse Eas520mJ
Pins, No. of3
Power Dissipation63W
Power, Pd63W
Temperature, Current25°C
Temperature, Full Power Rating25°C
Temperature, Tj Max175°C
Temperature, Tj Min-55°C
Transistors, No. of1
Voltage, Isolation2.5kV
Voltage, Vds Max100V
Voltage, Vgs th Max2V
Voltage, Vgs th Min1V
dv/dt5.0V/ns

Производитель: INFIN
IRLI2910.pdf
IRLI2910PBF (INFIN)
от 74,00 Склад (1-2 дн)

MOSFET, N, 100V, 27A, TO-220FP; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:31A; Resistance, Rds On:0.026ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:TO-220FP; Termination Type:Through Hole; Current, Iar:29A; Current, Idm Pulse:190A; Energy, Avalanche Repetitive Ear:6.3mJ; Energy, Avalanche Single Pulse Eas:520mJ; Pins, No.…