IRG4PH50KD (Infineon Technologies Ag (Siemens Semiconductors) )

Наименование IRG4PH50KD
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 14838
Напряжение насыщения К-Э
Напряжение коллектор-эмиттер макс.
Корпус
Ток коллектора макс. при 25°C

IGBT, TO-247

Transistor TypeIGBT
Transistor PolarityN
Current, Ic Continuous a Max45A
Voltage, Vce Sat Max2.77V
Power Dissipation200W
Case StyleTO-247
Current, Icm Pulsed90A
Pins, No. of3
Power, Pd200W
Temperature, Current25°C
Temperature, Full Power Rating25°C
Time, Fall Max300ns
Time, Rise100ns
Time, Short Circuit Withstand Min10чs
Transistors, No. of1
Voltage, Vceo1200V

IRG4PH50KDPBF (INFIN)
от 506,00 Склад (1-2 дн)

IGBT, 1200V, 45A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current, Ic Continuous a Max:45A; Voltage, Vce Sat Max:2.77V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Current, Icm Pulsed:90A; Device Marking:IRG4PH50KDPBF; Pins, No.…

IRG4PH30KDPBF (INFIN)
от 218,00 Склад (1-2 дн)

IGBT, TO-247; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current, Ic Continuous a Max:20A; Voltage, Vce Sat Max:3.1V; Power Dissipation:100W; Case Style:TO-247; Termination Type:Through Hole; Current, Icm Pulsed:40A; Pins, No.…