IRF7503 (Infineon Technologies Ag (Siemens Semiconductors) )

Наименование IRF7503
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 140372
Конфигурация и полярность

MOSFET, DUAL NN MICRO-8

Transistor TypeMOSFET
Transistor PolarityDual N
Current, Id Cont2.4A
Resistance, Rds On0.135ohm
Voltage, Vgs Rds on Measurement10V
Case StyleMicro8
Termination TypeSMD
Capacitance, Ciss Typ210pF
Charge, Qrr Typ @ Tj = 25°C48nC
Current, Idm Pulse14A
Depth, External5.03mm
Gfs, Min1.9A/V
Length / Height, External1.11mm
Marking, SMDF7503
Pins, No. of8
Pitch, Lead0.65mm
Pitch, Row4.24mm
Power Dissipation1.25W
Power, Pd1.25W
Resistance, Rds on Max0.135ohm
Temperature, Current25°C
Temperature, Full Power Rating25°C
Temperature, Tj Max150°C
Temperature, Tj Min-55°C
Time, trr Typ40ns
Transistors, No. of2
Voltage, Vds30V
Voltage, Vds Max30V
Voltage, Vgs th Min1V
Width, External3.05mm
dv/dt5.0V/ns

IRF7503TRPBF (INFIN)
от 16,50 Склад (1-2 дн)

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:2.4A; Package/Case:8-uSOIC; Power Dissipation, Pd:1.25W; Drain Source On Resistance @ 10V:135mohm