IRG4BC40F (Infineon Technologies Ag (Siemens Semiconductors) )

IRG4BC40F, Infineon Technologies Ag (Siemens Semiconductors) IRG4BC40F, Infineon Technologies Ag (Siemens Semiconductors) IRG4BC40F, Infineon Technologies Ag (Siemens Semiconductors)
Наименование IRG4BC40F
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 13639
Напряжение К-Э макс.
Корпус
Ток коллектора макс. при 25°C
Напряжение насыщения К-Э

IGBT, TO-220

Transistor TypeIGBT
Transistor PolarityN
Current, Ic Continuous a Max49A
Voltage, Vce Sat Max1.8V
Power Dissipation160W
Case StyleTO-220
Current, Icm Pulsed200A
Pins, No. of3
Power, Pd160W
Temperature, Current25°C
Temperature, Full Power Rating25°C
Time, Fall Max170ns
Time, Rise18ns
Transistors, No. of1
Voltage, Vceo600V

Производитель: INFIN
IRG4BC40F.pdf
IRG4BC40FPBF (INFIN)
от 132,00 Склад (1-2 дн)

IGBT, TO-220; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current, Ic Continuous a Max:49A; Voltage, Vce Sat Max:1.8V; Power Dissipation:160W; Case Style:TO-220; Termination Type:Through Hole; Current, Icm Pulsed:200A; Pins, No.…