BSP317PH6327 (Infineon Technologies Ag (Siemens Semiconductors) )

Наименование BSP317PH6327
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 1266145
Корпус
Конфигурация и полярность

BSP317PH6327 - Транзистор 0.43 A, 250 V, 4 ohm, P-CHANNEL, Si, POWER, MOSFET.

Отличительные характеристики:

  • Mfr Package Description: GREEN, PLASTIC PACKAGE-4
  • Lead Free: Yes
  • RoHS Compliant: Yes
  • Compliant: Yes
  • Status: ACTIVE
  • Package Shape: RECTANGULAR
  • Package Style: SMALL OUTLINE
  • Surface Mount: Yes
  • Terminal Form: GULL WING
  • Terminal Finish: MATTE TIN
  • Terminal Position: DUAL
  • Number of Terminals: 4
  • Package Body Material: PLASTIC/EPOXY
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Case Connection: DRAIN
  • Number of Elements: 1
  • Transistor Element Material: SILICON
  • Power Dissipation Ambient-Max: 1.8 W
  • Channel Type: P-CHANNEL
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Operating Mode: ENHANCEMENT
  • Transistor Type: GENERAL PURPOSE POWER
  • Drain Current-Max (ID): 0.4300 A
  • DS Breakdown Voltage-Min: 250 V
  • Drain-source On Resistance-Max: 4 ohm
  • Pulsed Drain Current-Max (IDM): 1.72 A
BSP317PL6327 (INFIN)
Доступно 58200 шт. (под заказ)

BSP317PH6327XTSA1 (INFIN)
от 23,70 Склад (1-2 дн)

20V-250V P-Channel Power MOSFET, Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the hig…

В НАЛИЧИИ 6шт.
34,10 от 104 шт. 29,20 от 226 шт. 26,80
Расчет доставки...