IRG4BC30FD (Infineon Technologies Ag (Siemens Semiconductors) )

Наименование IRG4BC30FD
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 11391
Напряжение насыщения К-Э
Ток коллектора макс. при 25°C
Напряжение коллектор-эмиттер макс.
Корпус

IGBT, TO-220

Transistor TypeIGBT
Transistor PolarityN
Current, Ic Continuous a Max31A
Voltage, Vce Sat Max1.9V
Power Dissipation100W
Case StyleTO-220
Current, Icm Pulsed120A
Pins, No. of3
Power, Pd100W
Temperature, Current25°C
Temperature, Full Power Rating25°C
Time, Fall Max160ns
Time, Rise26ns
Transistors, No. of1
Voltage, Vceo600V

IRG4BC30FDPBF (INFIN)
от 117,00 Склад (1-2 дн)

IGBT, 600V, 31A, TO-220; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current, Ic Continuous a Max:31A; Voltage, Vce Sat Max:1.9V; Power Dissipation:100W; Case Style:TO-220; Termination Type:Through Hole; Current, Icm Pulsed:120A; Device Marking:IRG4BC30FDPBF; Pins, No.…