IRLL2705 (Infineon Technologies Ag (Siemens Semiconductors) )

Наименование IRLL2705
Производитель Infineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул 11145
Напряжение для измерения Rds(on)
Номинальное напряжение Vgs
Rd(on)
Конфигурация и полярность
Макс. напряжение Vdss
Корпус

MOSFET, N LOGIC SOT-223

Transistor TypeMOSFET
Transistor PolarityN
Current, Id Cont3.8A
Resistance, Rds On0.04ohm
Case StyleSOT-223
Termination TypeSMD
Current, Idm Pulse30A
Depth, External7.3mm
Length / Height, External1.7mm
Marking, SMDLL2705
Power Dissipation2.1W
Power, Pd2.1W
Temperature, Current25°C
Temperature, Full Power Rating25°C
Transistors, No. of1
Voltage, Vds Max55V
Voltage, Vgs th Max2.5V
Width, External6.7mm
Width, Tape12mm

IRLL2705TRPBF (INFIN)
от 21,30 Склад (1-2 дн)

40V-75V N-Channel Power MOSFET, Преимущества RoHS Compliant Low RDS(on) Industry-leading quality Dynamic…

IRLL2705PBF (INFIN)
от 25,60 Склад (1-2 дн)

MOSFET, N, 55V, 3.8A, SOT-223; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:3.8A; Resistance, Rds On:0.04ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:SOT-223; Termination Type:SMD; Current, Idm Pulse:30A; Depth, External:7.3mm; Length / Height, External:1.7mm; Marking, SMD:LL2705; Power Dissipation:2.1W; Power, Pd:2.1W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:60°C/W; Transistors, No.…