Терраэлектроника

IKW40N120T2FKSA1, Infineon Technologies Ag (Siemens Semiconductors)

IKW40N120T2FKSA1 - high speed devices are used to reduce the size of the active components (25 kHz-70 kHz). High Speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design. 

  • Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
  • Low switching losses for high efficiency
  • Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
  • Fast switching behavior with low EMI emissions
  • Optimized diode for target applications, meaning further improvement in switching losses
  • Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
  • Short circuit capability
  • Offering T j(max) of 175°C
  • Packaged with and without freewheeling diode for increased design freedom: PG-TO247-3 

 

IKW40N120T2FKSA1


IKW40N120T2FKSA1, Infineon Technologies Ag (Siemens Semiconductors)

Параметры IKW40N120T2FKSA1

НаименованиеIKW40N120T2FKSA1
ПроизводительInfineon Technologies Ag (Siemens Semiconductors) (INFIN)
Артикул2114689
Ток коллектора макс. при 25°C
Напряжение насыщения К-Э
Рассеиваемая мощность Pd
Напряжение К-Э макс.
Корпус
Кол-во выводов
Максимальная рабочая температура

Аналоги IKW40N120T2FKSA1, доступные на складе

НА СКЛАДЕ
Цена (включая НДС)
426,00 руб
от 4 шт. 373,00 руб
от 10 шт. 319,50 руб
от 21 шт. 293,50 руб
Наличие на складе
109 шт.
поиск по складам

Заметили ошибку в работе сайта?
Скажите нам об этом