IKW40N120T2FKSA1, Infineon Technologies Ag (Siemens Semiconductors)

IKW40N120T2FKSA1 - high speed devices are used to reduce the size of the active components (25 kHz-70 kHz). High Speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design. 

  • Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
  • Low switching losses for high efficiency
  • Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
  • Fast switching behavior with low EMI emissions
  • Optimized diode for target applications, meaning further improvement in switching losses
  • Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
  • Short circuit capability
  • Offering T j(max) of 175°C
  • Packaged with and without freewheeling diode for increased design freedom: PG-TO247-3 



IKW40N120T2FKSA1, Infineon Technologies Ag (Siemens Semiconductors)

Параметры IKW40N120T2FKSA1

ПроизводительInfineon Technologies Ag (Siemens Semiconductors) (INFIN)
Цена (включая НДС)
472,50 руб
от 4 шт. 413,50 руб
от 10 шт. 354,50 руб
от 21 шт. 325,50 руб
Наличие на складах
267 шт. (склад, 1-2 дн.)
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