EPC9203: 20A, 0 ~ 60V, Half H-Bridge Driver(EPC9203)

This development board, measuring 11mm x 12mm, contains two enhancement mode (eGaN®) field effect transistors (FETs) arranged in a half bridge configuration with an onboard Texas Instruments LM5113 gate drive.

The purpose of these development boards is to simplify the evaluation process by optimizing the layout and including all the critical components on a single board that can be easily connected into any existing converter.

A complete block diagram of the circuit is given in Figure 1.

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EPC9203: 20A, 0 ~ 60V, Half H-Bridge Driver EPC9203

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Производитель: Efficient Power Conversion (EPC) Corporation
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EPC2021ENG
Efficient Power Conversion (EPC) Corporation
Арт.: 1904818 ИНФО PDF AN RD
1535,88
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Транзистор GaNFET N-Channel, Gallium Nitride 80V 60A Параметры: Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 60A (Ta) Rds On (Max) @ Id, Vgs 2.5 mOhm @ 29A, 5V Vgs(th) (Max) @ Id 2.5V @ 14mA Input Capacitance (Ciss) @ Vds 1700pF @ 40V
EPC2021ENG 1535,88
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