EPC9030: 3.2A, 0 ~ 100V, Half H-Bridge(EPC9030)

The development board is in a half bridge topology with onboard gate drives, featuring the EPC8000 family of high frequency enhancement mode (eGaN®) field effect transistors (FETs). The purpose of these development boards is to simplify the evaluation process of the EPC8000 family of eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

The development board is 2” x 1.5” and contains two eGaN FETs in a half bridge configuration using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A complete block diagram of the circuit is given in Figure 1.

For more information on the EPC8000 family of eGaN FETs, please refer to the datasheets. The datasheet should be read in conjunction with this quick start guide.

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EPC9030: 3.2A, 0 ~ 100V, Half H-Bridge EPC9030

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Производитель: Efficient Power Conversion (EPC) Corporation
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EPC8010ENGR
Efficient Power Conversion (EPC) Corporation
Арт.: 3095710 ИНФО PDF RD
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Транзистор GaNFET N-Channel, Gallium Nitride 100V 3.4A (Ta). Параметры: Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) @ Vgs: 0.354nC @ 50V Input Capacitance (Ciss) @ Vds: 47pF @ 50V
EPC8010ENGR
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