EPC2018 (Efficient Power Conversion (EPC) Corporation)
Транзистор GaNFET N-Channel, Gallium Nitride 150V 12A (Ta).
Параметры:
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Gate Charge (Qg) @ Vgs: 7.5nC @ 5V
Input Capacitance (Ciss) @ Vds: 540pF @ 100V
Параметры:
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Gate Charge (Qg) @ Vgs: 7.5nC @ 5V
Input Capacitance (Ciss) @ Vds: 540pF @ 100V
