EPC2010 (Efficient Power Conversion (EPC) Corporation)

EPC2010 - TRANS GAN 200V 25A BUMPED DIE

Технические характеристики:

• FET Type GaNFET N-Channel, Gallium Nitride
• FET Feature Logic Level Gate
• Drain to Source Voltage (Vdss) 200V
• Current - Continuous Drain (Id) @ 25°C 12A (Ta)
• Rds On (Max) @ Id, Vgs 25 mOhm @ 6A, 5V
• Vgs(th) (Max) @ Id 2.5V @ 3mA
• Gate Charge (Qg) @ Vgs 5nC @ 5V
• Input Capacitance (Ciss) @ Vds 480pF @ 100V
• Power - Max -
• Mounting Type Surface Mount
• Package / Case Die

Применение:

• High Speed DC-DC Conversion
• High Frequency Hard Switching and Soft Switching
• Class D Audio

Отличительные особенности:

• Higher Switching Frequency – lower switching losses and lower drive power
• Higher Efficiency – lower conduction and switching losses, zero reverse recovery losses
• Smaller Footprint - Higher power density