EPC2010 (Efficient Power Conversion (EPC) Corporation)
EPC2010 - TRANS GAN 200V 25A BUMPED DIE
Технические характеристики:
- FET Type GaNFET N-Channel, Gallium Nitride
- FET Feature Logic Level Gate
- Drain to Source Voltage (Vdss) 200V
- Current - Continuous Drain (Id) @ 25°C 12A (Ta)
- Rds On (Max) @ Id, Vgs 25 mOhm @ 6A, 5V
- Vgs(th) (Max) @ Id 2.5V @ 3mA
- Gate Charge (Qg) @ Vgs 5nC @ 5V
- Input Capacitance (Ciss) @ Vds 480pF @ 100V
- Power - Max -
- Mounting Type Surface Mount
- Package / Case Die
Применение:
- High Speed DC-DC Conversion
- High Frequency Hard Switching and Soft Switching
- Class D Audio
Отличительные особенности:
- Higher Switching Frequency – lower switching losses and lower drive power
- Higher Efficiency – lower conduction and switching losses, zero reverse recovery losses
- Smaller Footprint - Higher power density
В НАЛИЧИИ
26шт.
1230,00 ₽
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876,00 ₽
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832,00 ₽
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